? IRFI3306GPBF 1 www.irf.com ? 2013 international rectifier submit datasheet feedback october 7, 2013 g d s gate drain source base part number package type standard pack orderable part number form quantity IRFI3306GPBF to-220 full-pak tube 50 IRFI3306GPBF v dss 60v r ds(on) typ. 3.3m ? max. 4.2m ? i d 71a absolute maximum ratings symbol parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 71 a i d @ t c = 100c continuous drain current, v gs @ 10v 50 i dm pulsed drain current ? 300 p d @t c = 25c maximum power dissipation 46 w linear derating factor 0.31 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy (thermally limited) ? 311 mj t j operating junction and -55 to + 175 t stg storage temperature range soldering temperature, for 10 seconds (1.6mm from case) 300 ? c ? ? mounting torque, 6-32 or m3 screw 10lb ? in (1.1n ? m) ? to-220 full-pak ? g d s d applications ? high efficiency synchronous rectification in smps ? uninterruptible power supply ? high speed power switching ? hard switched and high frequency circuits benefits ? improved gate, avalanche and dynamic dv/dt ruggedness ? fully characterized capacitance and avalanche soa ? enhanced body diode dv/dt and di/dt capability ? lead-free ? halogen-free thermal resistance ? symbol parameter typ. max. units r ? jc junction-to-case ? ??? 3.23 r ? ja junction-to-ambient (pcb mount) ? ??? 65 c/w d s g ?
? IRFI3306GPBF 2 www.irf.com ? 2013 international rectifier october 7, 2013 submit datasheet feedback static electrical characteristics @ t j = 25c (unless otherwise specified) ? symbol parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 60 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.068 ??? v/c reference to 25c, i d = 5.0ma ? r ds(on) static drain-to-source on-resistance ??? 3.3 4.2 m ?? v gs = 10v, i d = 43a ? v gs(th) gate threshold voltage 2.0 ??? 4.0 v v ds = v gs , i d = 150a i dss drain-to-source leakage current ??? ??? 20 a v ds = 60v, v gs = 0v ? ??? ??? 250 ? v ds = 60v, v gs = 0v, t j = 125c i gss gate-to-source forward leakage ??? ??? 100 na v gs = 20v ? gate-to-source reverse leakage ??? ??? -100 ? v gs = -20v r g(int) internal gate resistance ??? 0.72 ??? ?? dynamic electrical characteristics @ t j = 25c (unless otherwise specified) ? symbol parameter min. typ. max. units conditions gfs forward transconductance 89 ??? ??? s v ds = 25v, i d = 43a q g total gate charge ??? 90 135 ? i d = 43a q gs gate-to-source charge ??? 22 ??? nc v ds = 30v q gd gate-to-drain ("miller" ) charge ??? 26 ??? ? v gs = 10v ? q sync total gate charge sync. (q g - q gd ) ??? 116 ??? i d = 43a, v ds =0v, v gs = 10v t d(on) turn-on delay time ??? 15 ??? v dd = 39v t r rise time ??? 30 ??? ns i d = 43a t d(off) turn-off delay time ??? 45 ??? ? r g = 2.7 ? t f fall time ??? 33 ??? ? v gs = 10v ? c iss input capacitance ??? 4685 ??? v gs = 0v c oss output capacitance ??? 506 ??? ? v ds = 50v c rss reverse transfer capacitance ??? 310 ??? pf ? = 1.0 mhz c oss eff. (er) effective output capacitance (energy related) ? ??? 733 ??? ? v gs = 0v, v ds = 0v to 48v ? c oss eff. (tr) effective output capacitance (time related) ? ??? 822 ??? ? v gs = 0v, v ds = 0v to 48v ? diode characteristics ? symbol parameter min. typ. max. units conditions i s continuous source current ??? ??? 71 a mosfet symbol (body diode) showing the i sm pulsed source current ??? ??? 300 a integral reverse (body diode) ? p-n junction diode. v sd diode forward voltage ??? ??? 1.3 v t j = 25c, i s = 43a, v gs = 0v ? dv/dt peak diode recovery ? ??? 2.3 ??? v/ns t rr ? reverse recovery time ??? 43 ??? ns t j = 25c ??? 47 ??? t j = 125c q rr reverse recovery charge ??? 63 ??? nc t j = 25c ??? 78 ??? t j = 125c i rrm reverse recovery current ??? 2.5 ??? a t j = 25c v r = 51v i f = 43a di/dt = 100a/s ? notes: ? ? repetitive rating; pulse width limited by max. junction temperature. ? limited by tjmax, starting t j = 25c, l = 0.34mh r g = 50? , i as = 43a, v gs =10v. part not recommended for use above this value. ? pulse width 400s; duty cycle 2%. ? r is measured at t j approximately 90c. ? coss eff. (tr) is a fixed capacitance that gives the same charging time as coss while vds is rising from 0 to 80% vdss. ? coss eff. (er) is a fixed capacitance that gives the same energy as coss while vds is rising from 0 to 80% vdss.
? IRFI3306GPBF 3 www.irf.com ? 2013 international rectifier october 7, 2013 submit datasheet feedback fig. 2 typical output characteristics fig. 3 typical transfer characteristics fig. 4 normalized on-resistance vs. temperature fig. 1 typical output characteristics 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss fig 5. typical capacitance vs. drain-to-source voltage 0 20406080100120 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 48v v ds = 30v v ds = 12v i d = 43a fig 6. typical gate charge vs. gate-to-source voltage 0.1 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 12v 10v 8.0v 6.0v 5.5v 5.0v bottom 4.8v ? 60s pulse width tj = 25c 4.8v 0.1 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 4.8v ? 60s pulse width tj = 175c vgs top 15v 12v 10v 8.0v 6.0v 5.5v 5.0v bottom 4.8v 2 3 4 5 6 7 v gs , gate-to-source voltage (v) 1.0 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 175c v ds = 25v ? 60s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.5 1.0 1.5 2.0 2.5 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 43a v gs = 10v
? IRFI3306GPBF 4 www.irf.com ? 2013 international rectifier october 7, 2013 submit datasheet feedback ? -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , temperature ( c ) 55 60 65 70 75 80 v ( b r ) d s s , d r a i n - t o - s o u r c e b r e a k d o w n v o l t a g e ( v ) id = 5ma fig 8. maximum safe operating area 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 200 400 600 800 1000 1200 1400 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 14a 23a bottom 43a fig 10. drain-to-source breakdown voltage 25 50 75 100 125 150 175 t c , case temperature (c) 0 20 40 60 80 i d , d r a i n c u r r e n t ( a ) fig 11. typical c oss stored energy -10 0 10 20 30 40 50 60 70 v ds, drain-to-source voltage (v) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 e n e r g y ( j ) fig 9. maximum drain current vs. case temperature fig 12. maximum avalanche energy vs. drain current 0.2 0.4 0.6 0.8 1.0 1.2 1.4 v sd , source-to-drain voltage (v) 1.0 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v fig. 7 typical source-to-drain diode forward voltage 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec dc
? IRFI3306GPBF 5 www.irf.com ? 2013 international rectifier october 7, 2013 submit datasheet feedback ? 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 0.1 1 10 100 a v a l a n c h e c u r r e n t ( a ) 0.05 duty cycle = single pulse 0.10 allowed avalanche current vs avalanche pulsewidth, tav, assuming ?? j = 25c and tstart = 150c. 0.01 allowed avalanche current vs avalanche pulsewidth, tav, assuming ? tj = 150c and tstart =25c (single pulse) fig 13. maximum effective transient thermal impedance, junction-to-case fig 14. typical avalanche current vs.pulsewidth 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 50 100 150 200 250 300 350 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 1.0% duty cycle i d = 43a fig 15. maximum avalanche energy vs. temperature notes on repetitive avalanche curves , figures 13, 14: (for further info, see an-1005 at www.irf.com) 1. avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type. 2. safe operation in avalanc he is allowed as long as t jmax is not exceeded. 3. equation below based on circuit and wa veforms shown in figures 16a, 16b. 4. p d (ave) = average power dissipation per single avalanche pulse. 5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. ? t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 14, 15). t av = average time in avalanche. d = duty cycle in avalanche = t av f z thjc (d, t av ) = transient thermal resistance, see figures 13) p d (ave) = 1/2 ( 1.3bvi av ) = ? t/ z thjc i av = 2 ? t/ [1.3bvz th ] e as (ar) = p d (ave) t av 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r ma l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc
? IRFI3306GPBF 6 www.irf.com ? 2013 international rectifier october 7, 2013 submit datasheet feedback ? 0 200 400 600 800 1000 di f /dt (a/s) 0 5 10 15 20 i r r m ( a ) i f = 28a v r = 51v t j = 25c t j = 125c 0 200 400 600 800 1000 di f /dt (a/s) 0 100 200 300 400 q r r ( n c ) i f = 28a v r = 51v t j = 25c t j = 125c fig 17. typical recovery current vs. dif/dt 0 200 400 600 800 1000 di f /dt (a/s) 0 100 200 300 400 q r r ( n c ) i f = 43a v r = 51v t j = 25c t j = 125c fig. 18 - typical recovery current vs. dif/dt fig. 20 - typical stored charge vs. dif/dt fig. 19 - typical stored charge vs. dif/dt 0 200 400 600 800 1000 di f /dt (a/s) 0 5 10 15 20 i r r m ( a ) i f = 43a v r = 51v t j = 25c t j = 125c fig 16. threshold voltage vs. temperature -75 -50 -25 0 25 50 75 100 125 150 175 t j , temperature ( c ) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 150a i d = 250a i d = 1.0ma i d = 1.0a
? IRFI3306GPBF 7 www.irf.com ? 2013 international rectifier october 7, 2013 submit datasheet feedback ? fig 22. peak diode recovery dv/dt test circuit for n-channel hexfet? power mosfets fig 22a. unclamped inductive test circuit fig 22b. unclamped inductive waveforms fig 23a. switching time test circuit fig 23b. switching time waveforms fig 24a. gate charge test circuit fig 24b. gate charge waveform vdd ?
? IRFI3306GPBF 8 www.irf.com ? 2013 international rectifier october 7, 2013 submit datasheet feedback ? to-220 full-pak package outline dimensions are shown in millimeters (inches) to-220 full-pak part marking information note: for the most current drawing please refer to ir website at http://www.irf.com/package/ to-220ab full-pak packages are not reco mmended for surface mount application.
? IRFI3306GPBF 9 www.irf.com ? 2013 international rectifier october 7, 2013 submit datasheet feedback ? qualification information ? qualification level industrial ?? (per jedec jesd47f ??? guidelines ) moisture sensitivity level to-220 full-pak n/a ???? (per jedec j-std-020d ??? ) rohs compliant yes ? qualification standards can be found at international rectifier?s web site http://www.irf.com/product-info/reliability ?? higher qualification ratings may be available should the user have such requirements. please contact your international rectifier sales repres entative for further information: http://www.irf.com/whoto-call/salesrep/ ??? applicable version of jedec standar d at the time of product release. ???? higher msl ratings may be available for the sp ecific package types listed here. please contact your international rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ revision history date comments 10/07/2013 ?? removed the ?silicon limited? from the id rating, on page 1.
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